A more accurate circuit model for CMOS Hall cross with non-linear resistors and JFETs

Fei Lyu,Zhenduo Zhu,Zhenfei Lu,Li Li,Jin Sha,Hongbing Pan, Yutong Bi

ISIC（2014）

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摘要

We propose a more accurate model for CMOS Hall cross with resistors and JFETs. This model not only completely takes into account the physical effects, such as geometrical effects, temperature effects, parasitical effects, and so on, but also assures the symmetry of the model. And it consists of eight nonlinear resistors, four JFETs, four current-controlled voltage sources, and four reversed-biased diodes modeled by capacitors and constant-current sources. The model has been written in Verilog-A hardware description language and applied in Cadence Spectre simulator successfully. The simulation results of the model are in good agreement with the experimental results.

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关键词

cmos integrated circuits,hall effect transducers,jfet circuits,integrated circuit modelling,magnetic sensors,resistors,cmos hall cross,cadence spectre simulator,jfets,verilog-a hardware description language,and cmos magnetic sensors,capacitors,circuit model,constant-current sources,current-controlled voltage sources,geometrical effects,nonlinear resistors,parasitical effects,physical effects,reversed-biased diodes,temperature effects,hall cross,spectre,verilog-a,semiconductor device modeling,accuracy

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