High power K-band GaN on SiC CPW monolithic power amplifier
Microwave Conference（2014）
摘要
This paper presents a high power amplifier at K-band (20.2 - 21.2 GHz). The AlGaN/GaN CPW MMIC amplifier is realized with 0.25 μm HEMT process on 2-inch semi-insulating SiC substrate. The amplifier has a small signal gain over 20 dB for Vds=15V and measured output power of over 31 dBm at 20.2 Ghz. PAE of the amplifier is around 22% for desired frequency band. Initial radiation hardness tests indicate a suitable stability of the technology in space.
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关键词
frequency 20.2 ghz to 21.2 ghz,iii-v semiconductors,monolithic microwave ic,mmic power amplifiers,radiation,wide band gap semiconductors,coplanar waveguide,coplanar waveguides,hemts,algan/gan,cpw monolithic power amplifier,algan-gan,gallium compounds,hemt process,mmic power amplifier,space,semiinsulating substrate,hemt integrated circuits,high power k-band cpw monolithic power amplifier,silicon compounds,bandwidth 20.2 ghz to 21.2 ghz,voltage 15 v,sic,aluminium compounds,k-band,size 2 inch,size 0.25 mum,cpw mmic amplifier,radiation hardening (electronics),radiation hardness tests,power generation
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