Fet Protection Of Gmr And Tmr Sensors

Icko Eric Timothy Iben,Alain Loiseau,Ephrem Gebreselasie

Electrical Overstress/Electrostatic Discharge Symposium（2014）

引用 23|浏览6

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摘要

TMR and GMR sensors used for reading data written on magnetic media can be damaged by ns wide pulses below 1 Volt. Since diodes turn on around 1 V, they offer little ESD protection. This paper explores the use of diode-connected FETs to protect MR sensors below 1 V.

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关键词

electrostatic discharge,field effect transistors,giant magnetoresistance,magnetic sensors,magnetoresistive devices,tunnelling magnetoresistance,esd protection,fet protection,gmr sensors,tmr sensors,diode-connected fet,diodes,magnetic media,voltage 1 v,resistance,schottky diodes

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