Improved Performance of Ultrathin Cu(InGa)Se Solar Cells With a Backwall Superstrate Configuration
Photovoltaics, IEEE Journal of （2014）
摘要
A backwall superstrate device structure that outperforms conventional substrate Cu(In,Ga)Se2 devices for thin absorbers is described. The backwall structure of glass/ITO/MoO3/Cu(In,Ga)Se2 /CdS/i-ZnO/Ag utilizes a MoO3 transparent back contact to allow illumination of the device from the back. The device performance has been improved by modifying the Cu(In,Ga)Se2, including alloying with Ag to form (AgCu)(InGa)Se2 absorber layers. In addition, sulfized back contacts including ITO-S and MoS2 are compared. Interface properties are discussed based on the XPS analysis and thermodynamics of reactions.
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关键词
II-VI semiconductors,X-ray photoelectron spectra,cadmium compounds,copper compounds,free energy,gallium compounds,glass,indium compounds,interface structure,molybdenum compounds,silver,silver compounds,solar cells,ternary semiconductors,wide band gap semiconductors,zinc compounds,(AgCu)(InGa)Se2 absorber layer,ITO-S back contact,MoO3 transparent back contact,MoS2 back contact,SiO2-ITO-MoO3-AgCu(InGa)Se2-CdS-ZnO-Ag,XPS analysis,backwall superstrate device structure,device illumination,glass-ITO-MoO3-Cu(In,Ga)Se2-CdS-i-ZnO-Ag backwall structure,interface properties,reaction thermodynamics,sulfized back contact,ultrathin Cu(InGa)Se2 solar cell,(AgCu)(InGa)Se2,backwall structure,solar cell,thin film,transparent back contact
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