Frequency-dependent shot noise in single-electron devices

Vincent Talbo,Javier Mateos,Sylvie Retailleau,Philippe Dollfus,T Gonzalez

Computational Electronics（2014）

引用 0|浏览1

暂无评分

摘要

The simulation of a double-tunnel junction with the SENS simulator gives access to the frequency-dependent and static behavior of shot noise. The concept of basic paths in a multi-state process provides a clear interpretation of the noise regimes, and allows locating cut-offs in autocorrelation functions and spectral densities.

查看译文

关键词

shot noise,single electron devices,tunnelling,sens simulator,autocorrelation functions,double-tunnel junction simulation,frequency-dependent shot noise,multistate process,single-electron devices,spectral density,static behavior,double-tunnel junction,monte-carlo simulations,single-electron device,mathematical model,silicon,monte carlo simulations,noise,tin,correlation,quantum dots

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要