A new accurate analytical expression for the SiPM transient response to single photons

Marano, D.,Bonanno, G.,Belluso, M.,Billotta, S.

Electronics, Circuits and Systems（2014）

引用 1|浏览4

暂无评分

摘要

In this paper a comprehensive analytical analysis is performed based on a new accurate electrical model of silicon photomultiplier (SiPM) detectors. The proposed circuit model allows to accurately reproduce the SiPM output time response regardless of the particular technology adopted for the fabrication process, and can also be profitably exploited to perform reliable circuit-level simulations. A novel expression of the detector photoelectron response due to a single photon absorption is systematically developed. The obtained waveform accurately reproduces the fast detector ignition, the ensuing avalanche self-quenching and the final slow recharging operation. Predictive capabilities of the adopted analytical model are demonstrated by means of experimental measurements on a real SiPM device.

查看译文

关键词

circuit simulation,elemental semiconductors,photodetectors,photomultipliers,photons,radiation quenching,silicon,Si,SiPM detectors,accurate analytical expression,avalanche self-quenching,detector ignition,detector photoelectron response,fabrication process,final slow recharging operation,reliable circuit level simulations,silicon photomultiplier detectors,single photon absorption,transient response,Analytical functions,SiPM,electrical model,small-signal analysis,time constants,transient response

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要