Advanced RMG Module to Improve AC/DC Performance for 14nm FinFETs and Beyond

M. Togo,M. Joshi,H. V. Meer,Y. Liu,C. Yong,B. Liu,X. He,X. Wu,S. Y. Mun,X. Zhang, D. Konduparthi, J. Lian,G. Bohra, W. H. Tong, C. Y. Xiao,D. Triyoso,E. Banghart,S. M. Pandey,A. Wei,R. Pal,R. Carter,M. H. Nam,M. Eller,S. Samavedam

2014 Symposium on VLSI Technology (VLSI-Technology) Digest of Technical Papers（2014）

引用 1|浏览59

关键词

MOSFET,etching,optimisation,tungsten,voltage control,work function,AC-DC performance,FinFET,STI oxide,WFM optimization,advanced RMG module,advanced replacement metal gate module,gate-contact capacitance,gate-contact space,size 14 nm,threshold voltage control,tungsten selective etch recess,work function metal

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