A radiation-hardened standard cell library for commercial 0.18 µm CMOS technology

Jia Liu,Weidong Yang,Yao Li,Ruitao Zhang,Jing Yang,Xiaogang Feng,Yuxin Wang,Dongbing Fu,Guangbing Chen,Ruzhang Li

Solid-State and Integrated Circuit Technology（2014）

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摘要

The high-performance standard cell library is very important for the ASIC design. A radiation-hardened standard cell library can significantly enhance the reliability and performance of digital circuits that work in a hard radiation environment. We have developed a radiation-hardened standard cell library for the commercial 0.18μm CMOS technology. Some of the radiation-hardened techniques (such as the temporal filtering structure, the P+/N+ guard rings) have been discussed, validated and used for the standard cells. Also we have characterized this RH standard cell library to support the RTL to GDSII ASIC design flow.

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关键词

cmos digital integrated circuits,application specific integrated circuits,integrated circuit design,integrated circuit reliability,logic design,radiation hardening (electronics),cmos technology,gdsii asic design flow,digital circuits,hard radiation environment,radiation-hardened standard cell library,radiation-hardened techniques,size 0.18 mum,temporal filtering structure

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