InAs/AlGaSb Esaki tunnel diodes grown by selective area epitaxy on GaSb (001) substrate

L Desplanque,Xianglei Han,M Fahed,Vinay K Chinni,D Troadec,M P Chauvat,Pierre Ruterana,Xavier Wallart

Indium Phosphide and Related Materials（2014）

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摘要

We report on the realization of AlGaSb/InAs Esaki tunnel diodes on GaSb (001) substrate. Selective area molecular beam epitaxy of InAs is used to define the area of the diodes down to submicron dimensions. A peak current density up to 1.3 MA/cm2 is achieved.

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关键词

iii-v semiconductors,aluminium compounds,gallium compounds,indium compounds,molecular beam epitaxial growth,tunnel diodes,esaki tunnel diodes,gasb,gasb (001) substrate,inas-algasb,selective area molecular beam epitaxy,apertures,tunneling,current density

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