High-resistivity SiGe BiCMOS technology development

Anthony K Stamper,Renata Camillocastillo,Hanyi Ding,James S Dunn,Mark D Jaffe,Vibhor Jain,Alvin J Joseph, Ian Mccallumcook,K M Newton,Shyam Parthasarathy,Robert M Rassel,Michael J Zierak,N T Schmidt, Srikanth Srihari,Randy Wolf

Bipolar/BiCMOS Circuits and Technology Meeting（2014）

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摘要

IBM first qualified a 0.35μm generation 1000 Ω-cm high resistivity substrate (HiRES) SiGe BiCMOS technology in 2011. This technology was optimized for WiFi and cellular NPN power amplifier (PA), NPN low noise amplifier (LNA), and isolated CMOS NFET switch rf front-end-IC (FEIC) integration. It includes an optional through silicon via used as a low inductance ground path for NPN emitters. Data for 50 Ω-cm, 1st generation HiRES, and 2nd generation HiRES NPN PA, LNA, and CMOS NFET switch devices are reviewed.

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关键词

bicmos analogue integrated circuits,ge-si alloys,cellular radio,circuit optimisation,field effect transistor switches,low noise amplifiers,power amplifiers,radiofrequency integrated circuits,three-dimensional integrated circuits,wireless lan,bicmos technology,cmos nfet switch rf front-end ic,cmos nfet switch devices,feic,hires npn pa,ibm,lna,npn emitters,npn low noise amplifier,sige,wifi,cellular npn power amplifier,high resistivity substrate,size 0.35 mum,through silicon via,high-resistivity substrate,pa,sige bicmos,front-end-ic,switch

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