Disturbance-suppressed ReRAM Write Algorithm for High-Capacity and High-Performance Memory
2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)（2014）
关键词
Emerging memory,Scaling limit,Resistive switching,ReRAM,3D-Stack,Cross-point,NAND Application,Write Disturbance,Multi-bit cell,High density
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