Novel Defects-Trapping Taox/Hfox Rram With Reliable Self-Compliance, High Nonlinearity, And Ultra-Low Current

The dependence of resistive switching of Ta/TaOX/HfOX device governed by general filamentary or novel defects-trapping mechanism on the operation current is demonstrated in this letter. The device with stable resistive switching, high nonlinearity, and robust self-compliance similar to 1 mu A is demonstrated, which can be integrated in the vertical RRAM structure. Based on constant current density switching (similar to 10(3) A/cm(2)) governed by defects-trapping transport, where the low and high resistance states attributed to the resistance of Ta/TaOX layer and device initial state, the switching current reduction by scaling down the cell size is proposed in transition metal oxide RRAM.