Performance of ultrathin alternative diffusion barrier metals for next - Generation BEOL technologies, and their effects on reliability
Interconnect Technology Conference / Advanced Metallization Conference（2014）
摘要
In order to maximize Cu volume and reduce via resistance, barrier thickness reduction is a strong option. Alternative barriers for next-generation BEOL were evaluated in terms of barrier performance to O2 and Cu diffusion, and effects on reliability. A clear correlation of O2 barrier performance to electromigration was observed, suggesting that the key role of the barrier layer is to prevent oxidation of Cu or the Cu/barrier interface. Long-throw PVD-TaN showed superior O2 barrier performance to alternative metals such as PEALD-TaN, thermal ALD-TaN, -TaN(Mn) and - MnN and MnSiO3 self-forming barrier.
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关键词
copper,diffusion barriers,electromigration,integrated circuit reliability,cu,peald-tan,barrier layer,barrier performance correlation,barrier thickness reduction,copper-barrier interface,long-throw pvd-tan,next generation beol technology,oxidation prevention,reliability effects,self-forming barrier,thermal ald-tan,ultrathin alternative diffusion barrier metal performance,mobile communication,reliability,ions,manganese,oxidation
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