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Performance of ultrathin alternative diffusion barrier metals for next - Generation BEOL technologies, and their effects on reliability

Takeshi Nogami,M S Chae,C Penny,T Shaw,H Shobha,Jie Li,S Cohen,C K Hu,Xiaobing Zhang,Mengxun He,Kunaljeet Tanwar,Raghuveer Patlolla,S T Chen,J A Kelly,Xingqin Lin,Oscar Van Der Straten,Andrew H Simon,Keiko Motoyama,Griselda Bonilla,Edward Huang,T Spooner,Daniel C Edelstein

Interconnect Technology Conference / Advanced Metallization Conference（2014）

Cited 7|Views74
Key words
copper,diffusion barriers,electromigration,integrated circuit reliability,cu,peald-tan,barrier layer,barrier performance correlation,barrier thickness reduction,copper-barrier interface,long-throw pvd-tan,next generation beol technology,oxidation prevention,reliability effects,self-forming barrier,thermal ald-tan,ultrathin alternative diffusion barrier metal performance,mobile communication,reliability,ions,manganese,oxidation
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