Development of a radiation-hardened 0.18 µm CMOS standard cell library for space applications

Jia Liu,Weidong Yang,Ruitao Zhang,Xiaogang Feng,Yuxin Wang,Guangbing Chen,Ruzhang Li,Yao Li,Jing Yang,Dongbing Fu

Electron Devices and Solid-State Circuits（2014）

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摘要

The radiation-hardened standard cell library can greatly improve the life-time and reliability of ASICs used in space applications. In this paper, we have discussed several radiation-hardened techniques, and have used SPICE simulation to validate these approaches. Finally, using these RH techniques, we have developed a radiation-hardened standard cell library based on 0.18 μm CMOS technology.

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关键词

cmos integrated circuits,spice,application specific integrated circuits,integrated circuit design,integrated circuit reliability,radiation hardening (electronics),space vehicle electronics,asic reliability,spice simulation,radiation hardened cmos standard cell library,size 0.18 mum,space applications,cmos,radiation-hardened,standard-cell library

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