Monte-Carlo Simulations of Magnetic Tunnel Junctions: From physics to application
Computational Electronics(2014)
摘要
Magnetic Tunnel Junctions (MTJs) - the basic structures of the Spin-Transfer Torque Magnetic RAMs (STT-MRAM) currently reaching the market - present a complex and probabilistic switching behavior. Although some analytical models describing this behavior exist, they can not describe all the switching regimes of the MTJs. They can model low (“subcritical”) and high (“supercritical”) currents, but not the intermediate currents, which are essential for applications. In this work, we present Monte-Carlo simulations of MTJs that have been used to build an analytical model linking the two different current regimes. This model allowed us to perform system-level simulations of an original neuro-inspired chip that uses MTJs as binary stochastic “synapses”.
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关键词
monte carlo methods,critical currents,magnetic tunnelling,random-access storage,torque,monte carlo simulations,analytical model,binary stochastic synapses,intermediate currents,magnetic tunnel junctions,original neuro-inspired chip,probabilistic switching behavior,spin-transfer torque magnetic ram,supercritical currents,system-level simulations,switches,mathematical model,stochastic processes
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