Characterization and circuit modeling of Graphene Nano Ribbon field effect transistors

This paper reports on the pulsed I-V and microwave characterizations of a Graphene Nano Ribbon FET (GNR-FET) for nonlinear electrical modeling. The extraction method of model parameters is based on the characterization of three specific technological structures called PAD, MUTE and FET (integrating only the coplanar access structure, the FET without graphene, and the entire GNR-FET) respectively. The differences between DC and pulsed I-V characterizations of the GNR FET and the evolution of its multi-bias S-parameters are investigated and compared to simulations. The nonlinear modeling of GNR FET is becoming of prime importance along with technological efforts to study the actual potential of this emerging technology.