Indium tin oxide film characterization using the classical Hall Effect

L H Willems Van Beveren,E Panchenko,N Anachi,L Hyde, Dennis W Smith,T D James,A Roberts,J C Mccallum

Optoelectronic and Microelectronic Materials & Devices（2014）

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摘要

We have used the classical Hall Effect to electrically characterize indium tin oxide (ITO) films grown by two different techniques on silica substrates. ITO films have the unique property that they can be both electrically conducting (and to be used for a gate electrode for example) as well as optically transparent (at least in the visible part of the spectrum). In the near infrared (NIR) the transmission typically reduces. However, the light absorption can in principle be compensated by growing thinner films.

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关键词

hall effect,electrical conductivity,indium compounds,infrared spectra,light absorption,semiconductor growth,semiconductor thin films,tin compounds,visible spectra,ito,ito films,sio2,classical hall effect,electrically conducting films,indium tin oxide film characterization,near infrared spectra,optically transparent films,silica substrate,indium tin oxide,magnetic field measurement,semiconductor devices,silicon,charge carrier density,conductivity,films,annealing

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