A compact fully integrated GaN high power amplifier for C-X band applications

Nathalie Deltimple,Victor Dupuy,Eric Kerherve,Benoit Malletguy, Claude Auric,Jeanphilippe Plaze,Yves Mancuso,Patrick Garrec

Radar Conference（2014）

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摘要

A fully integrated two-stage power amplifier is described for 4-6 W saturated output power over a 4GHz to 11GHz frequency range. The PA topology is chosen to obtain the best bandwidth, output power and Power Added Efficiency (PAE). The output stage is composed of two unit power cells and the power recombination is made by a stacked balun. The differential input of the power stage is provided by the first stage which realized a single to differentiel conversion. The PA is designed and fabricated in a 0.25μm GaN integrated technology from UMS foundry. Both simulations and measurement results are presented. This GaN PA provides 38 dBm of maximum saturated power and 18% to 31% peak PAE in the 4GHz to 11GHz frequency range.

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关键词

iii-v semiconductors,baluns,differential amplifiers,gallium compounds,microwave power amplifiers,wide band gap semiconductors,c-x band application,gan,pa topology,pae,ums foundry,compact fully integrated high power amplifier,differentiel conversion,efficiency 18 percent to 31 percent,frequency 4 ghz to 11 ghz,fully integrated two-stage power amplifier,power 4 w to 6 w,power added efficiency,power cell,power recombination,size 0.25 mum,stacked balun,high power amplifier (hpa),power combining,vertically stacked balun,inductors,power generation,power combiners,impedance matching

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