Understanding the Materials, Electrical and Reliability Impact of Al-addition to ZrO2 for BEOL Compatible MIM Capacitors

Dina H. Triyoso, Sanford Chu,Konrad Seidel,Wenke Weinreich, Kok-Yong Yiang, Mark G. Nolan, David P. Brunco, Jochen Rinderknecht,Dirk Utess, Carl Kyono, Rod Miller, Jeasung Park, Lili Cheng, Maik Liebau, Patrick Lomtscher, Robert Fox

Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)（2014）

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Key words

MIM devices,aluminium,capacitors,high-k dielectric thin films,semiconductor device reliability,zirconium compounds,BEOL compatible MIM capacitors,BEOL thermal budget requirement,DRAM capacitor module,VLSI systems,ZrO2-Al,backend processing thermal budget,capacitance density,circuit density,electrical characterization,embedded decoupling capacitors,high capacitance density MIM capacitors,high frequency noise reduction,high performance processors,high-k material,leakage current density,material characterization,metal layers,on-chip decoupling capacitors,operating frequency,parasitic inductances,power grid conductors,reliability characterization,voltage-timing problems

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