IRT: A modeling system for single event upset analysis that captures charge sharing effects

Kerryann Foley,Norbert Seifert,Jyothi Velamala,William G Bennett,Shashank Gupta

Waikoloa, HI（2014）

引用 16|浏览4

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摘要

IRT (Intel Radiation Tool), a GEANT4 based simulation system for the analysis of radiation-induced single event upsets that accounts for charge sharing effects is described. The capabilities and accuracy of the introduced simulation system are demonstrated against measured results for standard and reduced SER devices, focusing on Reinforcing Charge Collection (RCC) devices. Finally, the physical design space for optimizing soft error rates of RCC and Single Event Upset Tolerant (SEUT) devices is explored.

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关键词

radiation hardening (electronics),semiconductor device models,semiconductor device reliability,geant4 based simulation system,irt modeling system,rcc devices,seut devices,charge sharing effects,intel radiation tool,physical design space,radiation-induced single event upset analysis,reduced ser devices,reinforcing charge collection device,single event upset tolerant device,computational modeling,transistors,calibration

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