Integration of silicon photonics in bulk CMOS

Roy Meade,Jason S Orcutt,Karan Mehta,Ofer Teharzahav,David A B Miller,Michael Georgas,B Moss,Chen Sun,Yuhsin Chen,Jeffrey M Shainline,Mark T Wade,Reha Bafrali,Zvi Sternberg, G Machavariani,Gurtej S Sandhu,Milos A Popovic,Rajeev J Ram,Vladimir Stojanovic

VLSI Technology（2014）

引用 24|浏览90

暂无评分

摘要

The first monolithic process flow integrating silicon photonics on operational bulk CMOS has been developed. Features include deep-trench isolation, polysilicon waveguides, grating couplers, filters, modulators, and detectors. Fully functional on-chip CMOS enables Tx/Rx operation while minimizing interconnect parasitics. With the addition of an external 1280nm source, a fully functional optical link (5Gb/s 2.8pJ/b), capable of wavelength division multiplexing, has been demonstrated. In addition to the polysilicon resonant detector used in the link, a monolithically-integrated Silicon-Germanium selective epitaxial growth based photodetector was developed.

查看译文

关键词

cmos integrated circuits,ge-si alloys,epitaxial growth,integrated optics,isolation technology,monolithic integrated circuits,optical couplers,optical interconnections,optical waveguides,photodetectors,wavelength division multiplexing,sige,deep trench isolation,grating couplers,interconnect parasitics,monolithic process flow,monolithically integrated selective epitaxial growth based photodetector,operational bulk cmos,polysilicon resonant detector,polysilicon waveguides,silicon photonics,wavelength 1280 nm,cmos,optical interconnect,attenuation

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要