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Punch Through Stop Layer Optimization in Bulk FinFETs

2014 12TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)(2014)

引用 14|浏览8
关键词
MOSFET,semiconductor device models,n-type FinFET,off-state leakage,punch through leakage,punch through stop layer optimization,size 22 nm,triangular fins
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