Usefulness of VeSTIC devices for low-noise and radiation hard 3D integrated circuits

MIXDES(2014)

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摘要
VeSTIC technology [1, 2] is a very promising concept of digital, analog and mixed mode ICs design, providing very large scale of integration, extreme layout regularity, as well as the possibility of manufacturing cost reduction and of fully three-dimensional integration. These features seem to be very attractive also in the case of MEMS systems, in particular MAP sensors. With regard to prospective applications, a first insight to noise spectra and radiation hardness of the field-effect VeSTIC devices has been performed and confirms their usefulness.
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关键词
field effect transistors,radiation hardening (electronics),three-dimensional integrated circuits,field-effect vestic devices,low-noise 3d integrated circuits,noise spectra,radiation hard 3d integrated circuits,radiation hardness,vesfet,vestic,vertical-slit field-effect transistor,vertical-slit transistor integrated circuit,noise,logic gates,integrated circuits,transistors
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