Anti-fuse Memory Array Embedded in 14nm FinFET CMOS with Novel Selector-Less Bit-Cell Featuring Self-Rectifying Characteristics
2014 Symposium on VLSI Technology (VLSI-Technology) Digest of Technical Papers（2014）
关键词
CMOS memory circuits,MIS structures,MOSFET,FinFET CMOS technology,I-V characteristics,MIS structure,anti-fuse memory array,cross-point array,metal-insulator-semiconductor structure,one-capacitor per bit-cell design,selector-less bit-cell,self-rectifying characteristics,size 0.036 mum,size 14 nm
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