W-Band GaN Receiver Components Utilizing Highly Scaled, Next Generation GaN Device Technology

Margomenos, A.,Kurdoghlian, A.,Micovic, M.,Shinohara, K.

Compound Semiconductor Integrated Circuit Symposium（2014）

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摘要

We report the first W-band GaN receiver components using a next generation, highly scaled GaN device technology. This technology (40nm, fT= 220 GHz, fmax= 400 GHz, Vbrk > 40V) enables receiver components that meet or exceed performance reported by competing device technologies while maintaining > 5x higher breakdown voltage, higher linearity, dynamic range and RF survivability. This paper includes results for a 4 and a 5 stage low noise amplifier (LNA) (gain over 5 dB/stage at 110 GHz), a single-pole single-throw (SPST) and a single-pole double-throw (SPDT) switch with loss of 0.9 dB and 1.3 dB respectively and a reflective type phase shifter

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关键词

III-V semiconductors,gallium compounds,low noise amplifiers,microwave phase shifters,microwave receivers,semiconductor devices,wide band gap semiconductors,GaN,LNA,SPDT,SPST,W band receiver components,frequency 220 GHz,frequency 400 GHz,loss 0.9 dB,loss 1.3 dB,low noise amplifier,next generation device technology,reflective type phase shifter,single pole double-throw switch,single pole single throw switch

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