Temperature-dependent Studies of the Electrical Properties and the Conduction Mechanism of HfOx-based RRAM
PROCEEDINGS OF TECHNICAL PROGRAM - 2014 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATION (VLSI-TSA)（2014）
Key words
Poole-Frenkel effect,electric fields,hafnium compounds,high-k dielectric thin films,random-access storage,tunnelling,HfO,I-V characteristic analysis,Poole-Frenkel conduction mechanism,RRAM devices,electric field,electrical properties,high electric field,resistance state,resistive random access memory,temperature 350 K to 40 K,temperature-dependent study,temperature-insensitive conduction regime,trap-assisted tunneling
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