Activation energy of drain-current degradation in GaN HEMTs under high-power DC stress.
Microelectronics Reliability(2014)
摘要
•We have observed two sequential degradation mechanisms for GaN HEMTs under high-power stress at high temperature.•Saturation of gate leakage degradation appears to be necessary for the emergence of significant drain current degradation.•We have developed a new methodology to extract activation energy of GaN HEMT degradation rate from measurements on a single device. For this, we use step-temperature stress experiments.
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关键词
GaN HEMT,Arrhenius,Activation energy,Degradation
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