Impact of gate drive voltage on avalanche robustness of trench IGBTs.

Michele Riccio,L. Maresca,Andrea Irace,Giovanni Breglio,Yohei Iwahashi

Microelectronics Reliability（2014）

引用 11|浏览17

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摘要

•Experiments show the effect of gate drive voltage during avalanche operation.•A case study is conducted on a 1.2kV – 200A rated T-IGBT.•Electro-thermal TCAD mixed mode simulations have been performed.•Interplay between active and termination regions during UIS is analysed.•A boosted avalanche energy capability is proven for a bipolar gate drive circuit.

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关键词

Trench IGBT,Avalanche breakdown,IR thermography,Termination,Negative Differential Resistance,Gate driver circuit

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