A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS.

IEEE Transactions on Circuits and Systems I: Regular Papers(2014)

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摘要
CMOS technology scaling has enabled the design of high speed and efficient digital circuits. However, the continued scaling is detrimental to the design of RF and mm-wave systems. Higher sensitivity to process variations and inaccuracies in modeling of active and passive devices pose another challenge to the design of these systems at deep submicron technology nodes. This paper describes the desig...
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关键词
Logic gates,Metals,Impedance,Capacitance,Power generation,Layout,Power amplifiers
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