Towards amplifier design with a SiC graphene field-effect transistor

J D Aguirremorales,Sebastien Fregonese,A D D Dwivedi,Thomas Zimmer, M S Khenissa, Mohamed Moez Belhaj,Henri Happy

Ultimate Integration Silicon（2015）

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摘要

A power amplifier is implemented using a SiC Graphene Field-Effect Transistor. The amplifier gain is enhanced using an input matching LC circuit, which is connected to the GFET through standard RF probes. Experimental measurements and ADS-simulation based on developed models are used for the evaluation of the performances of the SiC GFET-based amplifier. It has been shown that a power gain of 4.8 dB can be achieved at 2.4 GHz using the GFET and the matching circuit assembly. Technology parameters are studied towards the improvement of the amplifier's figures of merit.

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关键词

lc circuits,graphene devices,power amplifiers,power field effect transistors,silicon compounds,wide band gap semiconductors,ads-simulation,gfet-based amplifier,rf probes,sic,frequency 2.4 ghz,gain 4.8 db,graphene field-effect transistor,input matching lc circuit,power amplifier gain,amplifier,compact model,field-effect transistor,graphene,field effect transistor

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