Diode Bridge Embedded AlGaN/GaN Bidirectional Switch
Electron Device Letters, IEEE （2015）
摘要
We have developed an AlGaN/GaN-on-Si metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) based bidirectional switch with embedded diode bridges for power switching applications. Four Schottky barrier diodes were embedded in an AlGaN/GaN MOSHFET to minimize the parasitic elements and thus reduce the chip area. The fabricated device functioned as a normally OFF, bidirectional switch, where the gate threshold voltage was ~1 V in both forward and reverses modes. The maximum drain current density in forward and reverse operation was ~120 mA/mm with the gate voltage of 12 V. The forward and reverse OFF-state breakdown voltages were 861 and 946 V, respectively.
更多查看译文
关键词
iii-v semiconductors,schottky barriers,schottky diodes,aluminium compounds,current density,elemental semiconductors,gallium compounds,high electron mobility transistors,power mosfet,power semiconductor diodes,power semiconductor switches,silicon,wide band gap semiconductors,algan-gan-si,moshfet,schottky barrier diode,bidirectional switch,embedded diode bridge,forward off-state breakdown voltage,maximum drain current density,metal-oxide-semiconductor heterostructure field-effect transistor,parasitic element minimization,power switching application,reverse off-state breakdown voltage,voltage 12 v,voltage 861 v,voltage 946 v,bi-directional switch,gan,diode bridge,metal-oxide-semiconductor heterostructure field-effect-transistor (moshfet),switches,transistors,logic gates
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要