Source Degenerated Derivative Superposition Method for Linearizing RF FET Differential Amplifiers
Microwave Theory and Techniques, IEEE Transactions (2015)
摘要
The second-order interaction effect in a field-effect transistor (FET) differential amplifier is analyzed using the Volterra series analysis method. The analysis results reveal that the second-order interaction is inherent in the fully differential amplifier structure, and thus can never be cancelled out. In contrast, it is found that the second-order interaction is possibly cancelled out by adding source degeneration impedance in the pseudodifferential amplifier (PDA) structure. In addition, the second-order interaction cancellation condition in the PDA can be made more robust and wider over the input signal swing by adopting the derivative superposition (DS) method. By combining the second-order interaction cancellation technique and the DS technique, a differential source degenerated DS method is proposed for linearizing FET differential amplifiers. A 2-GHz differential amplifier based on the proposed structure is designed for a power amplifier driver in an RF transmitter. Fabricated in 0.13-μm CMOS, it operates from a 1.2-V supply with the power dissipation of 30.2 mW. Measurement results show that it achieves +30.4 dBm of peak output third-order intercept point, 43 dBc of C/I at 0-dBm output power, +9.7 dBm of output-referred P1dB, and +10.6 dB of power gain.
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关键词
cmos integrated circuits,mmic amplifiers,uhf power amplifiers,volterra series,differential amplifiers,driver circuits,field effect transistors,radio transmitters,cmos integrated circuit,rf fet differential amplifiers,rf transmitter,volterra series analysis,differential source degenerated ds method,field effect transistor,frequency 2 ghz,gain 10.6 db,peak output third-order intercept point,power 30.2 mw,power amplifier driver,pseudodifferential amplifier,second-order interaction effect,size 0.13 mum,source degenerated derivative superposition,voltage 1.2 v,derivative superposition (ds),differential amplifier,field-effect transistor (fet),third-order intercept point (ip3),radio frequency,linearity,inductors,resistors,impedance
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