Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

M H Lee, Y T Wei,K Y Chu,J J Huang,Chang Wen Chen,C C Cheng,M J Chen,H Y Lee,Y S Chen,Loo Hay Lee,M J Tsai

Electron Device Letters, IEEE （2015）

引用 144|浏览6

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摘要

The antiferroelectricity in HfZrO2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SSmin = 23 mV/dec and SSavg = 50 mV/dec over 4 decades of IDS is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.

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关键词

antiferroelectricity,field effect transistors,hafnium compounds,low-power electronics,zirconium compounds,fet characteristics,hfzro2,coercive field,ferroelectric type,memory applications,near nonhysteresis,remanent polarization,steep slope,temperature 600 degc,ferroelectric,capacitance,negative capacitance,subthreshold swing,tin,low power electronics,logic gates,annealing,iron

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