Experimental investigations of SiGe channels for enhancing the SGOI tunnel FETs performance

C Le Royer,A Villalon,S Martinie,Phuong Nguyen,S Barraud, F Glowacki,Sorin Cristoloveanu,Maud Vinet

Ultimate Integration Silicon（2015）

引用 9|浏览21

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摘要

We report the fabrication and the characterization of Tunnel FETs fabricated on SiGe-On-Insulator with a High K Metal Gate (HKMG) CMOS process. The beneficial impact of low band gap SiGe channel on ID(VG) characteristics is presented and analyzed: compressive Si0.75Ge0.25 enables to increase by a factor of 20 the saturation currents, even at small gate length (LG=50nm). This large gain is due to the threshold voltage shift and to enhanced intrinsic band-to-band tunneling injection (both related to the narrow band gap of SiGe channels).

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关键词

cmos integrated circuits,ge-si alloys,field effect transistors,high-k dielectric thin films,tunnel transistors,hkmg cmos process,sgoi tunnel fet,sige,sige channels,sige-on-insulator,high k metal gate cmos process,intrinsic band-to-band tunneling injection,low band gap sige channel,saturation currents,threshold voltage shift,ion,sgoi,soi,ss,tfet,tunnel fet

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