Effects of Zirconium Substitution on the Electrical and Physical Properties of Metal-Ferroelectric (Bifeo3)-Insulator (Hfo2)-Silicon Structures for Non-Volatile Memories
Microelectronic Engineering（2013）
关键词
Zr-doped BiFeO3,X-ray photoelectron spectroscopy,Memory window,Depth profile,Conduction mechanism
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