Improvement of resistive switching uniformity in TiOx films by nitrogen annealing

The uniformity of resistive switching parameters is important to resistive random access memory (RRAM) device, development. This work reports a remarkably improved uniformity of resistive switching parameters in atomic-layer-deposited titanium-oxide films. The broad variations of the resistive switching parameters in the as-deposited TiOx films can be improved by nitrogen annealing. Based on the results of the X-ray photoelectron spectroscopy (XPS) depth profile, the improved uniformity of resistive switching in the nitrogen-annealed TiOx films may result from the higher density of oxygen vacancies in TiOx films due to nitrogen annealing.