Synthesis of c-axis inclined AIN films in an off-center system for shear wave devices

AlN thin films are of continuing interest for excitation of acoustic waves in surface and bulk acoustic wave devices. We report herein on preparation and characterization of c-axis inclined AlN films by a new method of rotating the substrate holder plate to different angles in an off-center system. The microstructure of the c-axis inclined AlN films was investigated using x-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The analyses showed that polycrystalline AlN films with c-axis inclination of up to 12A degrees could be obtained using the off-center system. Solidly mounted resonators based on the deposited c-axis inclined and vertical AlN films were successfully realized. The frequency responses showed dual-mode resonance characteristics located at 1.12 GHz and 1.87 GHz, corresponding to shear and longitudinal resonant modes, respectively.