A novel high reliability CMOS SRAM cell

A novel 8T single-event-upset (SEU) hardened and high static noise margin (SNM) SRAM cell is proposed. By adding one transistor paralleled with each access transistor, the drive capability of pull-up PMOS is greater than that of the conventional cell and the read access transistors are weaker than that of the conventional cell. So the hold, read SNM and critical charge increase greatly. The simulation results show that the critical charge is almost three times larger than that of the conventional 6T cell by appropriately sizing the pull-up transistors. The hold and read SNM of the new cell increase by 72% and 141.7%, respectively, compared to the 6T design, but it has a 54% area overhead and read performance penalty. According to these features, this novel cell suits high reliability applications, such as aerospace and military. © 2011 Chinese Institute of Electronics.