Simulation studies on PECVD SiO2 process aiming at TSV application

A simulation for studying the process of plasma enhanced chemical vapor deposition (PECVD) technology, which is a key process in through-silicon-via (TSV) technology, is proposed in this paper. Elementary models (including ions and neutral particles direct incidence, re-emission and so on) corresponding to the mechanism of PECVD are included, which contributes to the morphology of SiO2 film deposition. By selecting proper parameters of models such as flux of particles and sticking coefficient (Sc), the effect of different particles on deposition and the step-coverage effect of trenches with different aspect ratios are studied.