An accurate method to extract and separate interface and gate oxide traps by the MOSFET subthreshold current

Chenfei Zhang,Chenyue Ma,Jiaojiao Xu,Ruonan Wang,Xiaojin Zhao,Xin Gu,Xiufang Zhang,Wen Wu,Wenping Wang,Wei Zhao,Yong Ma,Ruonan Wang,Dongwei Zhang,Wei Bian,Guozeng Yang,Zhang Yan,Zhiwei Liu,Yong Ma,Jin He

NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2（2011）

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摘要

In this paper, an accurate method is used to extract and separate interface and gate oxide traps by the subthreshold current of MOSFET. The xide trap is supposed to result in a turn-on voltage shift in the semi-log plotted transfer characteristics, while interface trap influences subthreshold slope of the device. The above theory is verified by ISE-Dessis simulation. The results demonstrate that this method is effective and accurate for extracting parameters of devices with gate length less than 1 mu m.

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关键词

Interface Trap,Gate Oxide Trap,Subthreshold Current

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