Preparation And Characterization Of Storage And Emission Functional Material Of Cs2o-Doped 12cao Center Dot 7al(2)O(3)

We provides a novel approach to generate low-temperature atomic oxygen anions (O-) emission using the cesium oxide-doped 12CaO center dot 7Al(2)O(3) (Cs2O-doped C12A7). The maximal emission intensity of O- from the Cs2O-doped C12A7 at 700 degrees C and 800 V/cm reached about 0.54 mu A/cm(2), which was about two times as strong as that from the un-doped C12A7 (0.23 mu A/cm(2)) under the same condition. The initiative temperature of the O- emission from the Cs2O-doped C12A7 was about 500 degrees C, which was also much lower than the initiative temperature from the un-doped C12A7 (570 degrees C) in the given field of 800 V/cm. High pure O- emission close to 100% could be obtained from the Cs2O-doped C12A7 under the lower temperature (<550 degrees C). The emission features of the Cs2O-doped C12A7, including the emission distribution, temperature effect, and emission branching ratio have been investigated in detail and compared with the un-doped C12A7. The structure and storage characteristics of the resulting material were also investigated via X-ray diffraction and electron paramagnetic resonance. It was found that doping Cs2O to C12A7 will lower the initiative emission temperature and enhance the emission intensity.