Organic light-emitting diodes with integrated inorganic photo detector for near-infrared optical up-conversion

We report a hybrid up-conversion device integrating a In0.2Ga0.8As/GaAs MQWs photodetector with an organic light emitting diode (OLED), that converts input 980nm infrared light to output 520nm green light. Devices with different interface layer, used as the hole injection layer (HIL) in OLEDs were fabricated and tested. It was found that the device with an HIL of MoO3-doped CuPc exhibited a lowest turn-on voltage of 2.6V. The maximum external up conversion efficiency of 0.81W/W% is achieved at the bias of 20V under an input 980nm NIR power density of 1mW/mm2.