Terahertz Electroluminescence From Be Delta-Doped Gaas/Alas Quantum Well

A Be delta-doped GaAs/AlAs three quantum wells emitter in the terahertz range is fabricated and electroluminescence is investigated. An electroluminescence peak centered at 23.4 meV with a full width at half maximum of 4.2 meV is observed under a bias of 2 V at low temperature (T=4.5 K). The emission peak is attributed to the 2p to 1s internal transitions of the Be acceptors in the center of delta-doped GaAs quantum well. The current-voltage characteristics of the device measured at different temperatures demonstrate a strong negative differential resistance and temperature dependence. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3463467]