High Differential Gain Single Photon Avalanche Photodiode with Improved Structure
35th International Conference on Infrared, Millimeter, and Terahertz Waves（2010）
关键词
III-V semiconductors,avalanche photodiodes,charge density waves,indium compounds,InGaAs-InP,charge layer,high differential gain single photon avalanche photodiode,multiplication region thickness,sheet charge density
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