Analytic potential solution for modeling the symmetric DG accumulation mode MOSFETs

This paper presents a potential model for symmetrical DG accumulation mode MOSFETs. The proposed model is derived from complete 1-D Poisson-Boltzmann equation and takes three components of net charge density (fixed charge, holes and electrons) into account. This model provides a smooth potential solution from subthreshold to accumulation regions. The solved potentials are verified by numerical results for various bias condition and different structure parameters. In order to model short channel effects like CLM and DIBL, a linear shift in flatband voltage using a fitting parameter is included. The presented potential solution provides the framework of a physically-based DG AMOSFET compact model for circuit simulation.