A novel approach to simulate Fin-width Line Edge Roughness effect of FinFET performance

Guo Xinjie,Wang Shaodi,Ma Chenyue,Zhang Chenfei,Lin Xinnan,Wu Wen,He Frank,Wang Wenping,Liu Zhiwei,Zhao Wei,Yang Shengqi

2010 IEEE International Conference of Electron Devices and Solid-State Circuits, EDSSC 2010（2010）

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摘要

This paper developed a full three-dimensional (3-D) statistical simulation approach to investigate Fin-width Line Edge Roughness (LER) effect on the FinFETs performance. The line edge roughness is introduced by Matlab program, and then the intrinsic parameter fluctuations at fixed LER parameters are studied in carefully designed simulation experiments. The result shows that Fin-width LER causes a dramatic shift and fluctuations in threshold voltage. The simulation results also imply that the velocity saturation effect may come into effect even under low drain voltage due to LER effect. © 2010 IEEE.

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关键词

MOSFET,statistical analysis,3D statistical simulation approach,Fin-width line edge roughness effect,FinFET performance,Matlab program,intrinsic parameter fluctuation,velocity saturation effect,3-D numerical simulation,Fin-width LER,FinFETs,intrinsic parameter fluctuation,

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