The triangular pits eliminate of (112̄0) a-plane GaN growth by metal-orgamic chemical vapor deposition

Nonpolar a-plane (112̄0) GaN has been grown on r-plane (11̄02) sapphire by metal-orgamic chemical vapor deposition. The crystal quality has been greatly improved by using the AlGaN multiple-quantum-well interlayers. The surface morphology and the crystal quality were investigated by high resolution X-ray diffraction and atomic force microscopy. The triangular pits were eliminated completely. The precession of the X-ray diffraction symmetric reflection peak full with width at half maximum of (112̄0) is 680″. © 2009 Chin. Phys. Soc.