Effects of oxygen partial pressure on the resistance switching properties of La0.7Ca0.3MnO3 thin films prepared by pulsed laser deposition method

The La0.7Ca0.3MnO3 (LCMO) films were prepared by the pulse laser deposition method on Pt/Ti/SiO2/Si substrates under the 02 partial pressures of 0.01Pa, 1Pa, and 10 Pa, respectively. XRD patterns show that LCMO film grown under the 02 partial pressure of 0.01 Pa exhibited good crystallinity and (110) preferred orientation. Due to the strong collision in the plume, the crystal quality of LCMO films grown under 1Pa and 10Pa decreased remarkably. Electrical measurements show that the LCMO films grown under low O-2 partial pressure has stable resistance switching property. The oxygen content but crystallinity is a key factor for the resistance switching property of LCMO film. The lack of oxygen promotes the resistance switching properties of LCMO films.