Design and analysis of an I-shaped TSV structure for 3D SiP

A TSV (Through Silicon Via) structure with I-shaped structure for 3D packaging is proposed in this paper. Based on the notching effect and gradient etching process of DRIE, this kind of structure can be fabricated in the existed facilities, without additional processes and equipments. According to microwave transmission line theory and by using finite element full-wave analysis tool, simulation of the transmission characteristic for the novel TSV vertical interconnections with I-shaped vias has been performed. Simulation results demonstrate that the excellent performances can be achieved.