Simulation on plasma doping for shallow junction formation
Shanghai（2008）
摘要
Plasma doping (PD) is a potential shallow junction technology. Accurate simulation on PD is needed for further development and application. The simulation on PD with localized molecular method is presented in this paper. The verification of simulation results on dopant concentration profile by experimental data is shown. Simulation on FinFET doping is illustrated. The efficiency of side doping on fin structure is investigated.
更多查看译文
关键词
semiconductor doping,side doping,localized molecular method,shallow junction formation,dopant concentration profile,fin structure,finfet doping,plasma doping,molecular dynamics method,plasma materials processing,mosfet,voltage,doping,cmos technology,computational modeling
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要